# Question 3.22: Objective: Design a circuit with an enhancement-mode MESFET....

Objective: Design a circuit with an enhancement-mode MESFET.

Consider the circuit shown in Figure 3.65(a). The transistor parameters are: $V_{T N} = 0.24 V, K_{n} = 1.1 mA/V²$ , and λ = 0. Let $R_{1} + R_{2} = 50 kΩ$. Design the circuit such that $V_{GS} = 0.50 V$ and $V_{DS} = 2.5 V$.

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Question: 3.20

## Objective: Design a JFET circuit with a voltage divider biasing circuit. Consider the circuit shown in Figure 3.61(a) with transistor parameters IDSS = 12 mA, VP = −3.5 V, and λ = 0. Let R1 + R2 = 100 kΩ. Design the circuit such that the dc drain current is ID = 5 mA and the dc drain-to-source ...

Assume the transistor is biased in the saturation ...
Question: 3.18

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The dc voltage at the source of M_{1}[/late...
Question: 3.17

## Objective: Design the biasing of a multistage MOSFET circuit to meet specific requirements. Consider the circuit shown in Figure 3.52 with transistor parameters Kn1 = 500 µA/V² , Kn2 = 200 µA/V² , VT N1 = VT N2 = 1.2 V, and λ1 = λ2 = 0. Design the circuit such that IDQ1 = 0.2 mA, IDQ2 = 0.5 mA, ...

For output transistor $M_{2}$, we hav...
Question: 3.12

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One solution is to bias the transistor in the satu...
Question: 3.6

## Objective: Design a circuit with a p-channel MOSFET that is biased with both negative and positive supply voltages and that contains a source resistor RS to meet a set of specifications. Specifications: The circuit to be designed is shown in Figure 3.29. Design the circuit such that IDQ = 100 µA ...

Assuming that the transistor is biased in the satu...
Question: 3.5

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Assuming the transistor is biased in the saturatio...
Question: 3.DA.7

Question: 3.19

## Objective: Calculate iD and vDS (sat) in an n-channel pn JFET. Assume the saturation current is IDSS = 2 mA and the pinchoff voltage is VP = −3.5 V. Calculate iD and vDS (sat) for vG S = 0, VP /4, and VP /2 ...

From Equation (3.32), we have i_{D} = I_{DS...
Question: 3.16

## Objective: Determine the currents and voltages in a MOSFET constant-current source. For the circuit shown in Figure 3.50, the transistor parameters are: Kn1 = 0.2 mA/V², Kn2 = Kn3 = Kn4 = 0.1 mA/V², and VT N 1 = VT N 2 = VT N 3 = VT N 4 = 1V. ...

From Equation (3.30), we can determine V_{G...
Since the bias current $I_{Q2}$ and r...