## Q. 4.4

## Chapter 4

## Q. 4.4

Objective: Design the bias of a MOSFET circuit such that the Q-point is in the middle of the saturation region. Determine the resulting small-signal voltage gain.

Specifications: The circuit to be designed has the configuration shown in Figure 4.17. Let R_{1}||R_{2} = 100 kΩ. Design the circuit such that the Q-point is I_{DQ} = 2 mA and the Q-point is in the middle of the saturation region.

Choices: A transistor with nominal parameters V_{T N} = 1 V, k´_{n} = 80 µA/V^{2} , W/L = 25, and λ = 0.015 V^{−1} is available.

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