## Q. 16.4

Objective: Determine the change in the high output voltage of an NMOS inverter with enhancement load, taking the body effect into account.

Consider the NMOS inverter with enhancement load in Figure 16.9(a). The transistor parameters are $V_{T N DO} = V_{T N LO} = 0.5 V$ and $K_{D}/K_{L} = 16$. Assume the inverter is biased at $V_{DD} = 2.5 V$, assume the body effect coefficient is $γ = 0.5 V^{1/2}$ , and let $\phi_{f p} = 0.365 V$.

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## Objective: Determine the transition point, minimum output voltage, maximum drain current, and maximum power dissipation of an NMOS inverter with resistor load. Specifications: Consider the circuit in Figure 16.3(a) with parameters VDD = 2.5 V and RD = 20 kΩ. The transistor parameters are VT N = 0.5 ...

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