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Semiconductor Physics and Devices: Basic Principles [EXP-44122]
122 SOLVED PROBLEMS
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Question: 4.10
Calculat e the thermal-equilibrium electron and hole concentrations in germanium for a given doping concentration. Consider a germanium sample at T = 300 K in which Nd = 2 × 10^14 cm^-3 and Na = 0. Assume that ni = 2.4 × 10^13 cm^-3.
Question: 10.6
Calculate Cox, C min′ , and C FB′ for a MOS capacitor. Consider a p-type silicon substrate at T = 300 K doped to Na = 10^16 cm^-3. The oxide is silicon dioxide with a thickness of tox = 18 nm = 180 Å, and the gate is aluminum.
Question: 12.2
Calculate the base transport factor. Assume transistor parameters of xB = 0.80 μm and LB = 10.0 μm.
Question: 10.9
Calculate the body-effect coefficient and the change in the threshold voltage due to an applied source-to-body voltage. Consider an n-channel silicon MOSFET at T = 300 K. Assume the substrate is doped to Na = 3 × 10^16 cm^-3 and assume the oxide is silicon dioxide with a thickness of tox = 20 nm =
Question: 7.1
Calculate the built-in potential barrier in a pn junction. Consider a silicon pn junction at T = 300 K with doping concentrations of Na = 2 × 10^17 cm^-3 and Nd = 10^15 cm^-3.
Question: 12.8
Calculate the change in collector current with a change in neutral base width , and estimate the Early voltage. Consider a uniformly doped silicon npn bipolar transistor with the following parameters: NB = 5 × 10^16 cm^-3 , NC = 2 × 10^15 cm^-3, xB0 = 0.70 μm, and DB = 25 cm^2 /s. Assume that xB0
Question: 3.1
Calculate the change in kinetic energy of an electron when the velocity changes by a small amount. Consider an electron traveling at a velocity of 10^7 cm/s. Assume that the velocity increases by a value of 1 cm/s. The increase in kinetic energy is given by ΔE = 1/2 mv2^2 – 1/2 mv1^2 = 1/2 m(v2^2 –
Question: 12.12
Calculate the collector–emitter saturation voltage of a bipolar transistor at T = 300 K. Assume that αF = 0.99, αR = 0.20, IC = 1 mA, and IB = 50 μA.
Question: 12.7
Calculate the common-emitter current gain of a silicon npn bipolar transistor at T = 300 K given a set of parameters. Assume the following parameters: DE = 10 cm^2/s xB =0.70 μm DB = 25 cm^2/s xE =0.50 μm τEO 1 × 10^-7 S NE = 1 × 10^18 cm^-3 τBO 5 × 10^-7 S NB = 1 × 10^16 cm^-3 Jr0 = 5 × 10^-8 A /C
Question: 14.9
Calculate the critical angle at a semiconductor–air interface. Consider the interface between GaAs and air.
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