Question 22.8: Simulate the operation of the diff-amp in Fig. 22.22 using t......

Simulate the operation of the diff-amp in Fig. 22.22 using the parameters from Table 9.1.

Table 9.1 Typical parameters for analog design using the long-channel CMOS process discussed in this book. Note that the parameters may change with temperature or drain-to-source voltage (e.g., Fig. 9.24).

Long-channel MOSFET parameters for general analog design
VDD = 5 V and a scale factor of 1 μm (scale = 1e-6)

Parameter NMOS PMOS Comments
Bias current, I_D 20 \mu A 20 \mu A Approximate
W/L 10/2 30/2 Selected based on I_D\ \text{and}\ V_{DS,sat}
V_{DS,sat}\ \text{and}\ V_{SD,sat} 250 mV 250 mV For sizes listed
V_{GS}\ \text{and}\ V_{SG} 1.05 V 1.15 V No body effect
V_{THN}\ \text{and}\ V_{THP} 800 mV 900 mV Typical
\partial V_{THN,P}/\partial T -1\ \text{mV/C°} -1.4\ \text{mV/C°} Change with temperature
KP_n\ \text{and}\ KP_p 120\ \mu A/V^2 40\ \mu A/V^2 t_{ox}=200\ \mathring{A}
C_{o x}^{\prime}=\varepsilon _{o x}/t_{o x} 1.75fF/\mu m^2 1.75fF/\mu m^2 C_{ox}=C_{o x}^{\prime}WL\cdot (scale)^2
C_{oxn}\ \text{and}\ C_{oxp} 35fF 105fF PMOS is three times wider
C_{gsn}\ \text{and}\ C_{sgp} 23.3fF 70fF C_{gs}=\frac{2}{3}C_{ox}
C_{gdn}\ \text{and}\ C_{dgp} 2fF 6fF C_{gd}=CGDO\cdot W\cdot scale
g_{mn}\ \text{and}\ g_{mp} 150\ \mu A/V 150\ \mu A/V At\ I_D=20\ \mu A
r_{on}\ \text{and}\ r_{op} 5\ M\Omega 4\ M\Omega Approximate at I_D=20\ \mu A
g_{mn}r_{on}\ \text{and}\ g_{mp}r_{op} 750 V/V 600 V/V Open circuit gain
\lambda _n\ \text{and}\ \lambda _p 0.01\ V^{-1} 0.0125\ V^{-1} At L = 2
f_{Tn}\ \text{and}\ f_{Tp} 900 MHz 300 MHz \text{For}\ L=2,f_T\ \text{goes up if}\ L=2
22.22
9.24
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The simulation results are seen in Fig. 22.23. Note that when both inputs are at 3.5 V, the output currents are equal. This figure should be  to Fig. 22.3.

Note how in Fig. 22.3, the output currents flatten out above a maximum input voltage. Here the current continues to increase.

22.23
22.3

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