A PN-junction diode has a reverse saturation current of 30 μA at a temperature, of 125°C. At the same temperature, find the dynamic resistance for 0.2 V bias in forward and reverse directions.
A PN-junction diode has a reverse saturation current of 30 μA at a temperature, of 125°C. At the same temperature, find the dynamic resistance for 0.2 V bias in forward and reverse directions.
Given The reverse saturation current, I_{o} = 30 × 10 ^{– 6} A and V = 0.2 V
We know that the dynamic resistance =\frac{\eta V_{T} }{I_{0}e^{V/\eta V_{T} } }
Here, η = 1 for germanium and V_{T}=\frac{T}{11,600} =\frac{125+273}{11,600} =34.3 mV
Therefore, forward dynamic resistance r_{f}=\frac{34.3\times 10^{-3} }{30\times 10^{-6}(e^{0.2/34.3\times 10^{-3} } ) }=3.356 \Omega
Reverse dynamic resistance, r_{r}=\frac{ \eta V_{T} }{I_{0}e^{-V/\eta V_{T} } } =\frac{34.3\times 10^{-3} }{30\times 10^{-6}(e^{-0.2/34.3\times 10^{-3} } ) } =389.5k\Omega