Give the working principle of PN junction diode in reverse bias?
A diode is said to be operated in reverse bias condition if we connect the negative terminal of the voltage source to the p-type side and positive terminal of the voltage source to the n-type side of the diode. At that condition, due to electrostatic attraction of the negative potential of the source, the holes in the p-type region would be shifted more away from the junction leaving more uncovered negative ions at the junction. In the same way, the free electrons in the n-type region would be shifted more away from the junction towards the positive terminal of the voltage source leaving more uncovered positive ions in the junction. As a result of this phenomenon, the depletion region becomes wider. This condition of a diode is called the reverse biased condition, as shown in Figure 5.70. At that condition, no majority carriers across the junction as they go away from the junction. In this way, a diode blocks the flow of current when it is reverse biased.
There are always some free electrons in the p-type semiconductor and some holes in the n-type semiconductor. These opposite charge carriers in a semiconductor are called minority charge carriers. In the reverse biased condition, the holes find themselves in the n-type side would easily cross the reverse-biased depletion region as the field across the depletion region does not present rather it helps minority charge carriers to cross the depletion region. As a result, there is a tiny current flowing through the diode from positive to the negative side. The amplitude of this current is very small as the number of minority charge carriers in the diode is very small. This current is called reverse saturation current.
If the reverse voltage across a diode gets increased beyond a safe value, due to higher electrostatic force and due to higher kinetic energy of minority charge carriers colliding with atoms, several covalent bonds get broken to contribute a huge number of free electron-hole pairs in the diode and the process is cumulative. The huge number of such generated charge carriers would contribute a huge reverse current in the diode. If this current is not limited by an external resistance connected to the diode circuit, the diode may permanently be destroyed.