Question 17.SG.Q.2: The gate oxide thickness in the MOS capacitor is (a) 50 nm (......

Wiley Acing the Gate Electronics and Communication Engineering [1079457]

Common Data Question 2, 3 and 4: The following figure shows the high-frequency capacitance-voltage (C-V) characteristics of a metal/ $SiO_2$ /silicon (MOS) capacitor having an area of $1 × 10^{−4} cm^2$ . Assume that the permittivities $(ε_oε_r)$ of silicon and $SiO_2$ are $1× 10^{−12} F/cm$ and $3.5 × 10^{−13} F/cm$ , respectively.

The gate oxide thickness in the MOS capacitor is

(a) 50 nm (b) 143 nm

(c) 350 nm (d) 1μm

1079457-17.9

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The capacitance is given by

$C=\frac{\varepsilon A}{d}$

Therefore,

$7 \times 10^{-12}=\frac{3.5 \times 10^{-13} \times 10^{-4}}{d}$

where d is the gate oxide thickness (in cm). Therefore, d = 50 nm.

Ans. (a)

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