Question 13.6: Analysis of a BJT Bias Circuit Solve for IC and VCE in the c...

Analysis of a BJT Bias Circuit
Solve for IC and VCE in the circuit of Figure 13.21(a) given that VCC = 15V, VBB = 5V, RC = 2 kΩ, RE = 2 kΩ, and β = 100. Repeat for β = 300.

13.21
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We assume that the transistor is in the active region and use the equivalent circuit shown in Figure 13.21(b). Writing a voltage equation through VBB, the base emitter junction, and RE, we have

V_{BB}=0.7+I_ER_E

This can be solved for the emitter current:

I_E=\frac{V_{BB}-0.7}{R_E} =2.15\mathrm{~mA}

Notice that the emitter current does not depend on the value of .

Next, we can compute the base current and collector current using Equations 13.2 and 13.10.

i_E=i_C+i_B               (13.2)

i_C=\beta i_B             (13.10)

I_C=\beta I_B

I_E=I_B+I_C

Using the first equation to substitute for IC in the second equation, we have

I_E=I_B+\beta I_B=(\beta +1) I_B

Solving for the base current, we obtain

I_B=\frac{I_E}{\beta+1}

Substituting values, we obtain the results given in Table 13.1. Notice that IB is lower for the higher β transistor, and IC is nearly constant.
Now, we can write a voltage equation around the collector loop to find VCE:

V_{CC}=R_CI_C+V_{CE}+R_EI_E

Substituting values found previously, we find that VCE = 6.44 V for β = 100 and VCE = 6.42 V for β = 300.

Table 13.1. Results for the Circuit of Example 13.6

0 I_B(\mu\mathrm{A}) I_C(\mathrm{mA}) V_{CE}(\mathrm{V})
β
100 21.3 2.13 6.44
300 7.14 2.14 6.42

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