Question 1.5: Objective: Calculate the built-in potential barrier of a pn ...

Microelectronics Circuit Analysis and Design

Objective: Calculate the built-in potential barrier of a pn junction. Consider a silicon pn junction at T = 300 K, doped at $N_{a} = 10^{16} cm^{−3}$ in the p-region and $N_{d} = 10^{17} cm^{−3}$ in the n-region.

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