A silicon BJT small signal amplifier shown in Fig. 11.28 has the circuit parameters as follows:
V_{CC} = 10 V, R_{1} = 11.5 kΩ , R_{2} = 41.4 kΩ , R_{C} = 5 kΩ , R_{E} = 1 kΩ
R_{s} = 1 kΩ , C_{E} = 150 μF, C_{C1} = C_{C2} = 20 μF and β= 50
C_{\pi} = 100 pF, C_{\mu} = 5 pF, C_{W} + C_{L} = 5 pF and R_{L} = 10 kΩ .
Determine (a) dc bias values (b) mid-frequency gain (c) low-frequency cut-off, and (d) high-frequency cut-off.