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Question 5.9: Objective: Design a pnp bipolar transistor circuit to meet a...

Objective: Design a pnp bipolar transistor circuit to meet a set of specifications.

Specifications: The circuit configuration to be designed is shown in Figure 5.36(a). The quiescent emitter-collector voltage is to be V_{EC Q} = 2.5  V.

Choices: Discrete resistors with tolerances of ±10 percent are to be used, an emitter resistor with a nominal value of R_{E} = 2  k\Omega is to be used, and a transistor with β = 60 and V_{E B}(on) = 0.7  V is available.

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