# Question 5.9: Objective: Design a pnp bipolar transistor circuit to meet a...

Objective: Design a pnp bipolar transistor circuit to meet a set of specifications.

Specifications: The circuit configuration to be designed is shown in Figure 5.36(a). The quiescent emitter-collector voltage is to be $V_{EC Q} = 2.5 V$.

Choices: Discrete resistors with tolerances of ±10 percent are to be used, an emitter resistor with a nominal value of $R_{E} = 2 k\Omega$ is to be used, and a transistor with β = 60 and $V_{E B}(on) = 0.7 V$ is available.

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Question: 5.16

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With β = 120, I_{C Q} \approx I_{E Q}[/late...
Question: 5.14

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The collector resistor is found from R_{C} ...
Question: 5.8

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Writing Kirchhoff’s voltage law equation around th...
Question: 5.20

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The initial design will neglect base currents. We ...
Question: 5.19

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The Thevenin equivalent circuit of the base circui...
Question: 5.DA.6

Question: 5.12

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The following table indicates the equations and re...
Question: 5.18

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The reference current is I_{1} = \frac{− (V...
Question: 5.17

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The Thevenin equivalent circuit is shown in Figure...
Question: 5.15