Calculate the emitter-to-collector transit time and the cutoff frequency of a bipolar transistor, with the following parameters.
Consider a silicon npn transistor at T=300 \mathrm{~K}. Assume the following parameters:
\begin{aligned}I_{E} &=1 \mathrm{~mA} & C_{j e} &=1 \mathrm{pF} \\x_{B} &=0.5 \mu \mathrm{m} & D_{n} &=25 \mathrm{~cm}^{2} / \mathrm{s} \\x_{d c} &=2.4 \mu \mathrm{m} & r_{c} &=20 \Omega \\C_{\mu} &=0.1 \mathrm{pF} & C_{s} &=0.1 \mathrm{pF}\end{aligned}