Calculate the thermal-equilibrium electron and hole concentrations in a compensated p-type semiconductor.
Consider a silicon semiconductor at T=300 \mathrm{~K} in which N_{a}=10^{16} \mathrm{~cm}^{-3} and N_{d}=3 \times 10^{15} \mathrm{~cm}^{-3}. Assume n_{i}=1.5 \times 10^{10} \mathrm{~cm}^{-3}.