Determine the impurity doping concentrations in a \mathrm{p}^{+} \mathrm{n} junction given the parameters from Figure 7.11.
Assume that the intercept and the slope of the curve in Figure 7.11 are V_{b i}=0.725 \mathrm{~V} and 6.15 \times 10^{15}\left(\mathrm{~F} / \mathrm{cm}^{2}\right)^{-2}(\mathrm{~V})^{-1}, respectively, for a silicon \mathrm{p}^{+} \mathrm{n} junction at T=300 \mathrm{~K}.