Calculate the built-in potential barrier in a pn junction.
Consider a silicon pn junction at T=300 \mathrm{~K} with doping concentrations of N_{a}= 2 \times 10^{17} \mathrm{~cm}^{-3} and N_{d}=10^{15} \mathrm{~cm}^{-3}.
Calculate the built-in potential barrier in a pn junction.
Consider a silicon pn junction at T=300 \mathrm{~K} with doping concentrations of N_{a}= 2 \times 10^{17} \mathrm{~cm}^{-3} and N_{d}=10^{15} \mathrm{~cm}^{-3}.