Question 5.16: Objective: Design a bias-stable circuit to meet a set of spe...

Objective: Design a bias-stable circuit to meet a set of specifications. Specifications: The circuit configuration to be designed is shown in Figure 5.54(a). Let V_{CC} = 5  V and R_{C} = 1  k\Omega. Choose R_{E} and determine the bias resistors R_{1} and R_{2} such that the circuit is considered bias stable and that V_{CE Q} = 3  V.

Choices: Assume the transistor has nominal values of β = 120 and V_{B E} (on) = 0.7  V. We will choose standard resistor values and will assume that the transistor current gain varies over the range 60 ≤ β ≤ 180.

Design Pointer: Typically, the voltage across R_{E} should be on the same order of magnitude as V_{B E} (on). Larger voltage drops may mean the supply voltage V_{CC} has to be increased in order to obtain the required voltage across the collector-emitter and across R_{C} .

5.54
The blue check mark means that this solution has been answered and checked by an expert. This guarantees that the final answer is accurate.
Learn more on how we answer questions.

With β = 120, I_{C Q} \approx I_{E Q} . Then, choosing a standard value of 0.51 kΩ for R_{E} , we find
I_{C Q} \cong \frac{V_{CC}  −  V_{C E Q} }{R_{C}  +  R_{E}} = \frac{5  −  3}{1  +  0.51} = 1.32  mA
The voltage drop across R_{E} is now (1.32)(0.51) = 0.673 V, which is approximately the desired value. The base current is found to be
I_{B Q} = \frac{I_{C Q}}{β} = \frac{1.32}{120} ⇒ 11.0  µA

Using the Thevenin equivalent circuit in Figure 5.54(b), we find
I_{B Q} = \frac{V_{T H}  −  V_{B E} (on)}{R_{T H}  +  (1  +  β)R_{E}}
For a bias-stable circuit, R_{T H} = 0.1(1 + β)R_{E} , or
R_{T H} = (0.1)(121)(0.51) = 6.17  k\Omega
Then,
I_{B Q} = 11.0  µA ⇒ \frac{V_{T H}  −  0.7}{6.17  +  (121)(0.51)}
which yields
V_{T H} = 0.747 + 0.70 = 1.447  V
Now
V_{T H} = \left(\frac{R_{2}}{R_{1}  +  R_{2}} \right) V_{CC} = \left(\frac{R_{2}}{R_{1}  +  R_{2}} \right) (5) = 1.447  V
or

\left(\frac{R_{2}}{R_{1}  +  R_{2}} \right) = \frac{1.447}{5} = 0.2894
Also,
R_{T H} = \frac{R_{1} R_{2}}{R_{1}  +  R_{2}} = 6.17  k\Omega = R_{1}\left(\frac{R_{2}}{R_{1}  +  R_{2}} \right) = R_{1}(0.2894)
which yields
R_{1} = 21.3  k\Omega   and    R_{2} = 8.69  k\Omega
From Appendix C, we can choose standard resistor values of R_{1} = 20  k\Omega and  R_{2} = 8.2  k\Omega.
Trade-offs: We will neglect, in this example, the tolerance effects of the resistors (end-of-chapter problems such as Problems 5.18 and 5.40 do include tolerance effects). We will consider the effect on the transistor Q-point values of the commonemitter current gain variation.
Using the standard resistor values, we have
R_{T H} = R_{1}||R_{2} = 20||8.2 = 5.82  k\Omega
and
V_{T H} = \left(\frac{R_{2}}{R_{1}  +  R_{2}} \right) (V_{CC}) = \left(\frac{8.2}{20  +  8.2} \right) (5) = 1.454  V
The base current is given by
I_{B Q} = \left[ \frac{V_{T H}  −  V_{B E} (on)}{R_{T H}  +  (1  +  β)R_{E}} \right]

while the collector current is I_{C Q} = β I_{B Q}, and the collector–emitter voltage is given by
V_{C E Q} = V_{CC}  −  I_{C Q} \left[R_{C} + \left(\frac{1  +  β}{β} \right)R_{E} \right]

The Q-point values for three values of β are shown in the following table

β 60 120 180
I_{BQ} = 20.4  µA I_{BQ} = 11.2  µA I_{BQ} = 7.68  µA
Q-point values I_{CQ} = 1.23  mA I_{CQ} = 1.34  mA I_{CQ} = 1.38  mA
V_{CEQ} = 3.13  V V_{CEQ} = 2.97  V V_{CEQ} = 2.91  V

Comment: The Q-point in this example is now considered to be stabilized against variations in β, and the voltage divider resistors R_{1} and R_{2} have reasonable values in the kilohm range. We see that the collector current changes by only −8.2 percent when β changes by a factor of 2 (from 120 to 60), and changes by only +3.0 percent when β changes by +50 percent (from 120 to 180). Compare these changes to those of the single-base resistor design in Example 5.14.

Computer Simulation: Figure 5.56 shows the PSpice circuit schematic diagram with the standard resistor values and with a standard 2N2222 transistor from the PSpice library for the circuit designed in this example. A dc analysis was performed and the resulting transistor Q-point values are shown. The collector–emitter voltage is V_{C E} = 2.80  V, which is close to the design value of 3 V. One reason for the difference is that the standard-valued resistors are not exactly equal to the design values.
Another reason for the slight difference is that the effective β of the 2N2222 is 157 compared to the assumed value of 120.

**** BIPOLAR JUNCTION TRANSISTORS
NAME Q_Q1
MODEL Q2N2222
IB 9.25E−06
IC 1.45E−03
VBE 6.55E−01
VBC −2.15E+00
VCE 2.80E+00
BETADC 1.57E+02

 

5.56

Related Answered Questions