Question 4.4: Use SPICE methods to generate (a) the CS drain characteristi......
Use SPICE methods to generate (a) the CS drain characteristics and (b) the transfer characteristic for an n-channel MOSFET that has the parameter values \text{Vto} = 4 \text{V}, \text{Kp} = 0.0008 \text{A/V}^2, \text{Rd} = 1 Ω, \text{and} \text{Rg} = 1 kΩ.
Step-by-Step
(a) Figure 4-11(a) shows the chosen connection method for measurement of both the drain characteristics and the transfer characteristic. The netlist code below generates the drain characteristic that has been plotted using the Probe feature of PSpice as Fig. 4-11(b).
| Ex4_4a.CIR – MOSFET drain characteristics vGS 1 0 0V vDS 2 0 0V M 2 1 0 0 NMOSG .MODEL NMOSG NMOS (Vto=4V Kp=0.0008ApVsq + Rd=1ohm Rg=1kohm) .DC vDS 0V 25V 0.5V vGS 0V 8V 1V .PROBE .END |
(b) The following netlist code maintains v_{DS} constant to determine the transfer characteristic that is plotted by use of Probe as Fig. 4-11(c).
| Ex4_4b.CIR – MOSFET transfer characteristic vGS 1 0 0V vDS 2 0 15V M 2 1 0 0 NMOSG .MODEL NMOSG NMOS (Vto=4V Kp=0.0008ApVsq + Rd=1ohm Rg=1kohm) .DC vGS 0V 8V 0.1V .PROBE .END |
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