Question 12.1: COMPARISON OF POWER GAIN DEFINITIONS A silicon bipolar junct...
COMPARISON OF POWER GAIN DEFINITIONS
A silicon bipolar junction transistor has the following scattering parameters at 1.0 GHz, with a 50Ω reference impedance:
S_{11} = 0.38∠−158°S_{12} = 0.11∠54°
S_{21} = 3.50∠80°
S_{22} = 0.40∠ −43°
The source impedance is Z_{S} = 25 Ω and the load impedance is Z_{L} = 40 Ω .Compute the power gain, the available power gain, and the transducer power gain
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