Question 12.3: Design an amplifier for maximum gain at 4 GHz using single-s...
CONJUGATELY MATCHED AMPLIFIER DESIGN
Design an amplifier for maximum gain at 4 GHz using single-stub matching sections. Calculate and plot the input return loss and the gain from 3 to 5 GHz. The transistor is a GaAs MESFET with the following scattering parameters (Z_{0} = 50 Ω):
f(GHz) |
S_{11} |
S_{12} |
S_{21} |
S_{22} |
3.0 |
0.80∠-89° |
0.03∠56° |
2.86∠99° |
0.76∠-41° |
4.0 |
0.72∠-116° |
0.03∠57° |
2.60∠76° |
0.73∠-54° |
5.0 |
0.66∠-142° |
0.03∠62° |
2.39∠54° |
0.72∠-68° |
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