Calculate the photoconductor gain of a silicon photoconductor.
Consider an n-type silicon photoconductor with a length L=100 \mu \mathrm{m}, cross-sectional area A=10^{-7} \mathrm{~cm}^{2}, and minority carrier lifetime \tau_{p}=10^{-6} \mathrm{~s} . Let the applied voltage be V=10 volts.