Calculate the steady-state photocurrent density in a reverse-biased, long pn diode. Consider a silicon pn diode at T=300 \mathrm{~K} with the following parameters:
\begin{array}{ll}N_{a}=10^{16} \mathrm{~cm}^{-3} & N_{d}=10^{16} \mathrm{~cm}^{-3} \\D_{n}=25 \mathrm{~cm}^{2} / \mathrm{s} & D_{p}=10 \mathrm{~cm}^{2} / \mathrm{s} \\ \tau_{n 0}=5 \times 10^{-7} \mathrm{~s} & \tau_{p 0}=10^{-7} \mathrm{~s}\end{array}
Assume that a reverse-biased voltage of V_{R}=5 volts is applied and let G_{L}=10^{21} \mathrm{~cm}^{-3}-\mathrm{s}^{-1}.