Question 14.5: Calculate the steady-state photocurrent density in a reverse...

Calculate the steady-state photocurrent density in a reverse-biased, long pn diode. Consider a silicon pn diode at T=300 \mathrm{~K} with the following parameters:

\begin{array}{ll}N_{a}=10^{16} \mathrm{~cm}^{-3} & N_{d}=10^{16} \mathrm{~cm}^{-3} \\D_{n}=25 \mathrm{~cm}^{2} / \mathrm{s} & D_{p}=10 \mathrm{~cm}^{2} / \mathrm{s} \\ \tau_{n 0}=5 \times 10^{-7} \mathrm{~s} & \tau_{p 0}=10^{-7} \mathrm{~s}\end{array}

Assume that a reverse-biased voltage of V_{R}=5 volts is applied and let G_{L}=10^{21} \mathrm{~cm}^{-3}-\mathrm{s}^{-1}.

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We may calculate various parameters as follows:

\begin{aligned}L_{n} &=\sqrt{D_{n} \tau_{n 0}}=\sqrt{(25)\left(5 \times 10^{-7}\right)}=35.4 \mu \mathrm{m} \\L_{p} &=\sqrt{D_{p} \tau_{p 0}}=\sqrt{(10)\left(10^{-7}\right)}=10.0 \mu \mathrm{m} \\V_{b i} &=V_{t} \ln \left(\frac{N_{a} N_{d}}{n_{i}^{2}}\right)=(0.0259) \ln \left[\frac{\left(10^{16}\right)\left(10^{16}\right)}{\left(1.5 \times 10^{10}\right)^{2}}\right]=0.695 \mathrm{~V} \\W &=\left\{\frac{2 \epsilon_{s}}{e}\left(\frac{N_{a}+N_{d}}{N_{a} N_{d}}\right)\left(V_{b i}+V_{R}\right)\right\}^{1 / 2} \\&=\left\{\frac{2(11.7)\left(8.85 \times 10^{-14}\right)}{1.6 \times 10^{-19}} \cdot \frac{\left(2 \times 10^{16}\right)}{\left(10^{16}\right)\left(10^{16}\right)} \cdot(0.695+5)\right\}^{1 / 2}=1.21 \mu \mathrm{m}\end{aligned}

Finally, the steady-state photocurrent density is

\begin{aligned}J_{L} &=e\left(W+L_{n}+L_{p}\right) G_{L} \\&=\left(1.6 \times 10^{-19}\right)(1.21+35.4+10.0) \times 10^{-4}\left(10^{21}\right)=0.75 \mathrm{~A} / \mathrm{cm}^{2}\end{aligned}

Comment

Again, keep in mind that this photocurrent is in the reverse-biased direction through the diode and is many orders of magnitude larger than the reverse-biased saturation current density in the pn junction diode.

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