Design the base width required to achieve a base transport factor of \alpha_{T}=0.9967. Consider a pnp bipolar transistor. Assume that D_{B}=10 \mathrm{~cm}^{2} / \mathrm{s} and \tau_{B 0}=10^{-7} \mathrm{~s}.
Design the base width required to achieve a base transport factor of \alpha_{T}=0.9967. Consider a pnp bipolar transistor. Assume that D_{B}=10 \mathrm{~cm}^{2} / \mathrm{s} and \tau_{B 0}=10^{-7} \mathrm{~s}.
The base transport factor applies to both pnp and npn transistors and is given by
\alpha_{T}=\frac{1}{\cosh \left(x_{B} / L_{B}\right)}=0.9967
Then
x_{B} / L_{B}=0.0814
We have
L_{B}=\sqrt{D_{B} \tau_{B 0}}=\sqrt{(10)\left(10^{-7}\right)}=10^{-3} \mathrm{~cm}
so that the base width must then be
x_{B}=0.814 \times 10^{-4} \mathrm{~cm}=0.814 \mu \mathrm{m}
Comment
If the base width is less than approximately 0.8 \mu \mathrm{m}, then the required base transport factor will be achieved. In most cases, the base transport factor will not be the limiting factor in the bipolar transistor current gain.