Question 12.4: Design the ratio of emitter doping to base doping in order t...

Design the ratio of emitter doping to base doping in order to achieve an emitter injection efficiency factor of \gamma=0.9967.

Consider an npn bipolar transistor. Assume, for simplicity, that D_{E}=D_{B}, L_{E}=L_{B}, and x_{E}=x_{B}.

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Equation (12.35b) reduces to

\gamma \approx \frac{1}{1+\frac{N_{B}}{N_{E}} \cdot \frac{D_{E}}{D_{B}} \cdot \frac{x_{B}}{x_{E}}}     (12.35b)

\gamma=\frac{1}{1+\frac{p_{E 0}}{n_{B 0}}}=\frac{1}{1+\frac{n_{i}^{2} / N_{E}}{n_{i}^{2} / N_{B}}}

so

\gamma=\frac{1}{1+\frac{N_{B}}{N_{E}}}=0.9967

Then

\frac{N_{B}}{N_{E}}=0.00331 \quad \text { or } \quad \frac{N_{E}}{N_{B}}=302

Comment

The emitter doping concentration must be much larger than the base doping concentration to achieve a high emitter injection efficiency.

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