Design the ratio of emitter doping to base doping in order to achieve an emitter injection efficiency factor of \gamma=0.9967.
Consider an npn bipolar transistor. Assume, for simplicity, that D_{E}=D_{B}, L_{E}=L_{B}, and x_{E}=x_{B}.
Design the ratio of emitter doping to base doping in order to achieve an emitter injection efficiency factor of \gamma=0.9967.
Consider an npn bipolar transistor. Assume, for simplicity, that D_{E}=D_{B}, L_{E}=L_{B}, and x_{E}=x_{B}.
Equation (12.35b) reduces to
\gamma \approx \frac{1}{1+\frac{N_{B}}{N_{E}} \cdot \frac{D_{E}}{D_{B}} \cdot \frac{x_{B}}{x_{E}}} (12.35b)
\gamma=\frac{1}{1+\frac{p_{E 0}}{n_{B 0}}}=\frac{1}{1+\frac{n_{i}^{2} / N_{E}}{n_{i}^{2} / N_{B}}}
so
\gamma=\frac{1}{1+\frac{N_{B}}{N_{E}}}=0.9967
Then
\frac{N_{B}}{N_{E}}=0.00331 \quad \text { or } \quad \frac{N_{E}}{N_{B}}=302
Comment
The emitter doping concentration must be much larger than the base doping concentration to achieve a high emitter injection efficiency.