Calculate the flat-band voltage for a MOS capacitor with a p-type semiconductor substrate.
Consider a MOS capacitor with a p-type silicon substrate doped to N_{a}=10^{16} \mathrm{~cm}^{-3}, a silicon dioxide insulator with a thickness of t_{o x}=20 \mathrm{~nm}=200 \mathring{A} , and an \mathrm{n}^{+}polysilicon gate. Assume that Q_{s s}^{\prime}=5 \times 10^{10} electronic charges per \mathrm{cm}^{2}.