Determine the inversion carrier mobility from experimental results.
Consider an n-channel MOSFET with W=15 \mu \mathrm{m}, L=2 \mu \mathrm{m}, and C_{\mathrm{ox}}=6.9 \times 10^{-8} \mathrm{~F} / \mathrm{cm}^{2}.
Assume that the drain current in the nonsaturation region for V_{D S}=0.10 \mathrm{~V} is I_{D}=35 \mu \mathrm{A} at V_{G S}=1.5 \mathrm{~V} and I_{D}=75 \mu \mathrm{A} at V_{G S}=2.5 \mathrm{~V}